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HY62SF16406D - 256Kx16bit full CMOS SRAM

General Description

and is subject to change without notice.

Hynix Electronics does not assume any responsibility for use of circuits described.

No patent licenses are implied.

Key Features

  • Fully static operation and Tri-state output.
  • TTL compatible inputs and outputs.
  • Battery backup -. 1.2V(min) data retention.
  • Standard pin configuration -. 48-ball FBGA Product No. Voltage (V) Speed (ns) 70/85 Operation Current/Icc(mA) 3 HY62SF16406D-I 1.7~2.3 Note 1. I : Industrial 2. Current value is max. Standby Current(uA) LL SL 12 6 Temperature (°C) -40~85 PIN.

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Full PDF Text Transcription for HY62SF16406D (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for HY62SF16406D. For precise diagrams, and layout, please refer to the original PDF.

www.DataSheet4U.com HY62SF16406D Series 256Kx16bit full CMOS SRAM Document Title 256K x16 bit 1.7 ~ 2.3V Super Low Power FCMOS Slow SRAM Revision History Revision No 00 0...

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2.3V Super Low Power FCMOS Slow SRAM Revision History Revision No 00 01 02 03 History Initial Draft Changed Logo Changed Isb1 values Changed Package Size (6.1mm -> 6.0mm) Draft Date Dec.20.2000 Mar.23.2001 Jun.07.2001 Aug.07.2001 Remark Preliminary Preliminary Preliminary Preliminary This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev.03 / Aug.01 Hynix Semiconductor HY62SF16406D Series Preliminary DESCRIPTION The HY62SF16406D is a high speed, super low power and 4Mbit f

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