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HY62UF16403A - 256Kx16bit full CMOS SRAM

General Description

and is subject to change without notice.

Hynix Electronics does not assume any responsibility for use of circuits described.

No patent licenses are implied.

Key Features

  • Fully static operation and Tri-state output.
  • TTL compatible inputs and outputs.
  • Battery backup -. 1.2V(min) data retention.
  • Standard pin configuration -. 48-ball uBGA Product No. Voltage (V) Speed (ns) Operation Current/Icc(mA) 5 5 HY62UF16403A 2.7~3.3 55/70/85 HY62UF16403A-I 2.7~3.3 55/70/85 Note 1. Blank : Commercial, I : Industrial 2. Current value is max. Standby Current(uA) LL SL 15 6 15 6 Temperature (°C) 0~70 -40~85(I) PIN.

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Full PDF Text Transcription for HY62UF16403A (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for HY62UF16403A. For precise diagrams, and layout, please refer to the original PDF.

www.DataSheet4U.com HY62UF16403A Series 256Kx16bit full CMOS SRAM Document Title 256K x16 bit 2.7 ~ 3.3V Super Low Power FCMOS Slow SRAM Revision History Revision No 09 H...

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3.3V Super Low Power FCMOS Slow SRAM Revision History Revision No 09 History Marking Information add tBLZ / tOLZ value is changed Output Load is redefined Isb, Isb1, Vdr, Iccdr are redefined Changed Logo Changed Isb1 values Draft Date Dec.18.2000 Remark Final 10 11 Mar.23.2001 Jun.07.2001 Final Final This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev.11 / Jun.01 Hynix Semiconductor HY62UF16403A Series DESCRIPTION The HY62UF16403A is a high speed, super low power and 4M

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