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HY62VF08401C - 256Kx16bit full CMOS SRAM

General Description

and is subject to change without notice.

Hynix Electronics does not assume any responsibility for use of circuits described.

No patent licenses are implied.

Key Features

  • Fully static operation and Tri-state output.
  • TTL compatible inputs and outputs.
  • Battery backup -. 1.2V(min) data retention.
  • Standard pin configuration -. 32 - sTSOP - 8X13.4(Standard) Product No. HY62VF08401C-I Voltage (V) 3.0~3.6 Speed (ns) 55/70 Operation Current/Icc(mA) 5 Standby Current(uA) LL SL 15 6 Temperature (°C) -40~85 Note 1. I : Industrial 2. Current value is max. PIN.

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Full PDF Text Transcription for HY62VF08401C (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for HY62VF08401C. For precise diagrams, and layout, please refer to the original PDF.

www.DataSheet4U.com HY62VF08401C Series 256Kx16bit full CMOS SRAM Document Title 512K x 8bit 3.0 ~ 3.6V Super low Power FCMOS Slow SRAM Revision History Revision No Histo...

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.6V Super low Power FCMOS Slow SRAM Revision History Revision No History Draft Date Remark 00 01 Initial Draft Changed Logo Dec.18.2000 Mar.23.2001 Final Final 02 Changed Isb1 values Jun.07.2001 Final This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev.02 / Jun.01 Hynix Semiconductor HY62VF08401C Series DESCRIPTION The HY62VF08401C is a high speed, super low power and 4Mbit full CMOS SRAM organized as 512K words by 8bits.

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