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HY62VT08081E Datasheet 32kx8bit CMOS Sram

Manufacturer: SK Hynix

Overview: HY62K(U,V)T08081E Series 32Kx8bit CMOS SRAM Document Title 32K x8 bit 2.7~3.3V / 3.0~3.6V / 2.7~3.6V Low Power Slow SRAM Revision History Revision No 00 .. History Initial Merged 3.0V/3.3V SPEC Revised - Marking Information Change : SOP Type - Voh Limit Change : 2.4V => 2.2V @2.7~3.6V Changed Logo - HYUNDAI -> hynix - Marking Information Change Draft Date Jan.20.2000 Remark Final 01 Feb.21.2001 Final 02 Apr.30.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

and is subject to change without notice.

Hynix Electronics does not assume any responsibility for use of circuits described.

No patent licenses are implied.

Key Features

  • Fully static operation and Tri-state output TTL compatible inputs and outputs Low power consumption Battery backup(L/LL-part) - 2.0V(min. ) data retention.
  • Standard pin configuration - 28 pin 600mil PDIP - 28 pin 330mil SOP - 28 pin 8x13.4 mm TSOP-I (Standard) Standby Current(uA) LL-Part 5 8 8 5 8 8 5 8 8 Temperature (°C) 0~70(Normal) -25~85(Extended) -40~85(Extended) 0~70(Normal) -25~85(Extended) -40~85(Extended) 0~70(Normal) -25~85(Extended) -40~.

More Datasheets from SK Hynix

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HY62V8200BLLSR HY62V8200B Series 256Kx8bit CMOS SRAM
HY62V8200BLLSR-E HY62V8200B Series 256Kx8bit CMOS SRAM
HY62V8200BLLSR-I HY62V8200B Series 256Kx8bit CMOS SRAM
HY62V8200BLLST HY62V8200B Series 256Kx8bit CMOS SRAM
HY62V8200BLLST-E HY62V8200B Series 256Kx8bit CMOS SRAM

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