HY62VT08081E Datasheet | SK Hynix

description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev 02 / Apr. 2001 Hynix Semiconductor HY62K(U,V)T08081E Series DESCRIPTION The HY62K(U,V)T08081E is a high-speed, low power and 32,786 X 8-bits CMOS Static Random Access Memory fabricated using Hynix's high performance CMOS process technology. It is suitable for use in low voltage operation and battery back-up application. This device has a data retention mode that guarantees data to remain valid at the minimum power supply voltage of 2.0 volt. .. FEATURES - - - - Fully static operation and Tri-state output TTL patible inputs and outputs Low power consumption Battery backup(L/LL-part) - 2.0V(min.) data retention - Standard pin configuration - 28 pin 600mil PDIP - 28 pin 330mil SOP - 28 pin 8x13.4 mm TSOP-I (Standard) Standby Current(u A) LL-Part 5 8 8 5 8 8 5 8 8 Temperature (°C) 0~70(Normal) -25~85(Extended) -40~85(Extended) 0~70(Normal) -25~85(Extended) -40~85(Extended) 0~70(Normal) -25~85(Extended) -40~85(Extended) Product Voltage Speed No. (V) (ns) HY62KT08081E-C 2.7~3.6 70- /85/100 HY62KT08081E-E HY62KT08081E-I HY62VT08081E-C 70/85/100 3.0~3.6 HY62VT08081E-E HY62VT08081E-I HY62UT08081E-C 2.7~3.3 70- /85/100 HY62UT08081E-E HY62UT08081E-I Note - . Measured at 30p F test load. Operation Current(m A) 2 PIN CONNECTION A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O1 I/O2 I/O3 Vss Vcc /WE A13 A8 A9 A11 /OE A10 /CS I/O8 I/O7 I/O6 I/O5 I/O4 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O1 I/O2 I/O3 Vss 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 Vcc /WE A13 A8 A9 A11 /OE A10 /CS I/O8 I/O7 I/O6 I/O5 I/O4 /OE A11 A9 A8 A13 /WE Vcc A14 A12 A7 A6 A5 A4 A3 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 A10 /CS I/O8 I/O7 I/O6 I/O5 I/O4 Vss I/O3 I/O2 I/O1 A0 A1 A2 PDIP TSOP-I(St...