HYM71V16655BT8 Datasheet | SK Hynix

DESCRIPTION Preliminary The Hynix HYM71V16655BT8 Series are 16Mx64bits Synchronous DRAM Modules. The modules are posed of eight 16Mx8bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin glass-epoxy printed circuit board. One 0.22u F and one 0.0022u F decoupling capacitors per each SDRAM are mounted on the PCB. The Hynix HYM71V16655BT8 Series are Dual In-line Memory Modules suitable for easy interchange and addition of 128Mbytes memory. The Hynix HYM71V16655BT8 Series are fully synchronous operation referenced to the positive edge of the clock . All inputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve very high bandwidth. FEATURES - - - - PC100MHz support 168pin SDRAM Unbuffered DIMM Serial Presence Detect with EEPROM 1.15” (29.21mm) Height PCB with single sided ponents Single 3.3±0.3V power supply All device pins are patible with LVTTL interface - 1, 2, 4 or 8 for Interleave Burst - Data mask function by DQM - Programmable CAS Latency ; 2, 3 Clocks - - - - - SDRAM internal banks : four banks Module bank : one physical bank Auto refresh and self refresh 4096 refresh cycles / 64ms Programmable Burst Length and Burst Type - 1, 2, 4 or 8 or Full page for Sequential Burst - - ORDERING INFORMATION Part No. HYM71V16655BT8-8 HYM71V16655BT8-P HYM71V16655BT8-S Clock Frequency 125MHz 100MHz 100MHz Internal Bank Ref. Power SDRAM Package Plating 4 Banks 4K Normal TSOP-II Gold This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc. does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 0.1/Nov. 01 2 .. PC100 SDRAM Unbuffered DIMM HYM71V16655BT8 Series PIN DESCRIPTION PIN CK0~CK3 CKE0 /S0, /S2 BA0, BA1 A0 ~ A11 /RAS, /CAS, /WE DQM0~DQM7 DQ0 ~ DQ63 VCC VSS SCL SDA SA0~2 WP NC PIN NAME Clock Inputs Clock Enable Chip Select SDRAM...