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HYMD216M726AK6-H - Unbuffered DDR SO-DIMM

Download the HYMD216M726AK6-H datasheet PDF (HYMD216M726A6-H included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for unbuffered ddr so-dimm.

Description

Hynix HYMD216M726A(L)6-J/M/K/H/L series is unbuffered 200-pin double data rate Synchronous DRAM Small Outline Dual In-Line Memory Modules (SO-DIMMs) which are organized as 16Mx72 high-speed memory arrays.

Features

  • 128MB (16M x72) Unbuffered DDR SO-DIMM ECCbased on 16Mx16 DDR SDRAM JEDEC Standard 200-pin small outline dual in-line memory module (SO-DIMM) 2.5V +/- 0.2V VDD and VDDQ Power supply All inputs and outputs are compatible with SSTL_2 interface Fully differential clock operations (CK & /CK) with 100MHz/125MHz/133MHz/166MHz All addresses and control inputs except Data, Data strobes and Data masks latched on the rising edges of the clock Dat.

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Note: The manufacturer provides a single datasheet file (HYMD216M726A6-H_HynixSemiconductor.pdf) that lists specifications for multiple related part numbers.
Other Datasheets by Hynix Semiconductor

Full PDF Text Transcription

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16Mx72 bits Unbuffered DDR SO-DIMM HYMD216M726A(L)6-J/M/K/H/L DESCRIPTION Hynix HYMD216M726A(L)6-J/M/K/H/L series is unbuffered 200-pin double data rate Synchronous DRAM Small Outline Dual In-Line Memory Modules (SO-DIMMs) which are organized as 16Mx72 high-speed memory arrays. Hynix HYMD216M726A(L)6-J/M/K/H/L series consists of five 16Mx16 DDR SDRAM in 400mil TSOP II packages on a 200pin glass-epoxy substrate. Hynix HYMD216M726A(L)6-J/M/K/H/L series provide a high performance 8-byte interface in 67.60mmX 31.75mm form factor of industry standard. It is suitable for easy interchange and addition. Hynix HYMD216M726A(L)6-J/M/K/H/L series is designed for high speed of up to 166MHz and offers fully synchronous operations referenced to both rising and falling edges of differential clock inputs.
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