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HYMD512M646AFS8-D4 - Unbuffered DDR SO-DIMM

General Description

and is subject to change without notice.

Hynix Semiconductor does not assume any responsibility for use of circuits described.

No patent licenses are implied.

Key Features

  • 1GB (128M x 64) Unbuffered DDR SO-DIMM based on 128Mx8 DDR MCP SDRAM 200-pin small outline dual in-line memory module (SO-DIMM) 2.6V +/- 0.1V VDD and VDDQ Power supply All inputs and outputs are compatible with SSTL_2 interface Fully differential clock operations (CK & /CK) with 200MHz All addresses and control inputs except Data, Data strobes and Data masks latched on the rising edges of the clock Data(DQ), Data strobes and Write masks.

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Full PDF Text Transcription for HYMD512M646AFS8-D4 (Reference)

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128Mx64 bits Unbuffered DDR SO-DIMM HYMD512M646A(L)FS8-D43/D4 Document Title 128Mx64 bits Unbuffered DDR SO-DIMM Revision History No. 0.1 0.2 Initial Draft 1) Reflected a...

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DDR SO-DIMM Revision History No. 0.1 0.2 Initial Draft 1) Reflected a “notational” change in module thickness on page 14 - Not Real ! 2) Corrected some typos History Draft Date Dec. 2003 Apr. 2004 Remark www.DataSheet4U.com This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 0.2 / Apr. 2004 1 128Mx64 bits Unbuffered DDR SO-DIMM HYMD512M646A(L)FS8-D43/D4 DESCRIPTION www.DataSheet4U.