HYMD512M646BMFS8-H
description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 0.1 / Jan. 2004 1
128Mx64 bits Unbuffered DDR SO-DIMM HYMD512M646B(L)FS8-J/M/K/H/L
DESCRIPTION
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Hynix HYMD512M646B(L)FS8-J/M/K/H/L series is unbuffered 200-pin double data rate Synchronous DRAM Small Outline Dual In-Line Memory Modules (SO-DIMMs) which are organized as 128Mx64 high-speed memory arrays. Hynix HYMD512M646B(L)FS8-J/M/K/H/L series consists of eight 128Mx8 DDR SDRAM in FBGA packages on a 200pin glass-epoxy substrate. Hynix HYMD512M646B(L)FS8-J/M/K/H/L series provide a high performance 8-byte interface in 67.60mm X 31.75mm form factor of industry standard. It is suitable for easy interchange and addition. Hynix HYMD512M646B(L)FS8-J/M/K/H/L series is designed for high speed of up to 166MHz and offers fully synchronous operations referenced to both rising and falling edges of differential clock...