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HYMD512M646BMFS8-H - Unbuffered DDR SO-DIMM

Download the HYMD512M646BMFS8-H datasheet PDF (HYMD512M646BFS8-H included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for unbuffered ddr so-dimm.

Description

and is subject to change without notice.

Hynix Semiconductor does not assume any responsibility for use of circuits described.

No patent licenses are implied.

Features

  • 1GB (128M x 64) Unbuffered DDR SO-DIMM based on 128Mx8 DDR MCP SDRAM 200-pin small outline dual in-line memory module (SO-DIMM) 2.5V +/- 0.2V VDD and VDDQ Power supply All inputs and outputs are compatible with SSTL_2 interface Fully differential clock operations (CK & /CK) with 100MHz/125MHz/133MHz/166MHz All addresses and control inputs except Data, Data strobes and Data masks latched on the rising edges of the clock Data(DQ), Data st.

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Note: The manufacturer provides a single datasheet file (HYMD512M646BFS8-H_HynixSemiconductor.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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128Mx64 bits Unbuffered DDR SO-DIMM HYMD512M646B(L)FS8-J/M/K/H/L Document Title 128Mx64 bits Unbuffered DDR SO-DIMM Revision History No. 0.1 History Initial Draft Draft Date Jan. 2004 Remark www.DataSheet4U.com This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 0.1 / Jan. 2004 1 128Mx64 bits Unbuffered DDR SO-DIMM HYMD512M646B(L)FS8-J/M/K/H/L DESCRIPTION www.DataSheet4U.com Hynix HYMD512M646B(L)FS8-J/M/K/H/L series is unbuffered 200-pin double data rate Synchronous DRAM Small Outline Dual In-Line Memory Modules (SO-DIMMs) which are organized as 128Mx64 high-speed memory arrays.
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