Datasheet4U Logo Datasheet4U.com

Y27US08121M - HY27US08121M

Datasheet Summary

Description

of Device Operations - /CE Don’t Care Enabled(Disabled) -> Sequential Row Read Disabled (Enabled) (Page22) 3) Add the description of System Interface Using CE don’t care (Page37) 1) Delete Errata 2) Change Characteristics (3V Product) 0.5 tCRY Before After 60 + tr 70 + tr tREA@ID Read 35 45 Jun.

01.

📥 Download Datasheet

Datasheet preview – Y27US08121M

Datasheet Details

Part number Y27US08121M
Manufacturer Hynix Semiconductor
File Size 796.67 KB
Description HY27US08121M
Datasheet download datasheet Y27US08121M Datasheet
Additional preview pages of the Y27US08121M datasheet.

📁 Similar Datasheet

Other Datasheets by Hynix Semiconductor

    Full PDF Text Transcription

    Click to expand full text
    HY27SS(08/16)121M Series HY27US(08/16)121M Series 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash Document Title 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash Memory Revision History No. www.DataShe et4U.com 0.0 0.1 0.2 0.3 Initial Draft Renewal Product Group Make a decision of PKG information Append 1.8V Operation Product to Data sheet 1) Add Errata tWC Specification 0.4 Relaxed value 50 60 tWH 15 20 tWP 25 40 tRC 50 60 tREH 15 20 tRP 30 40 tREA@ID Read 35 45 Mar.28.2004 Preliminary History Draft Date Sep.17.2003 Oct.07.2003 Nov.08.2003 Dec.01.
    Published: |