Isahaya Electronics Corporation 2SA1235A
Silicon PNP Epitaxial Type Transistor
| Part No. | 2SA1235A |
|---|---|
| Datasheet | 2SA1235A Download |
| Manufacturer |  Isahaya Electronics Corporation |
| Description | Silicon PNP Epitaxial Type Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
（Ｔａ＝２５℃） Symbol ＶＣＢＯ ＶＥＢＯ ＶＣＥＯ Ｉ Ｃ ＰＣ Ｔｊ Ｔｓｔｇ Parameter Collector to Base voltage Emitter to Base voltage Collector to Emitter voltage Collector current Collector dissipation Junction temperature Storage temperature Ratings 2SA1235A -60 -6 -50 200 200 200 +150 -55～+150 450 2SA1602A -60 2SA1993 -50 Unit V V V mA mW ℃ ℃ELECTRICAL CHARACTERISTICS
（Ta=25℃） Parame ter Ｖ（ＢＲ）ＣＥＯ Ｉ ＣＢＯ Ｉ EＢＯ Symbol C to E break down voltage Collector cut off current Emitter cut off current DC forward current gain DC forward current gain C to E Saturation Vlotage Gain bandwidth product Collector output capacitance C to E break down voltage 2SA1993 Test conditions I C=-100μA，RBE=∞ 2SA1235A,2SA1602A Min -50 E E Limits Typ Max -0.1 -0.1 -0.1 500 Unit V μA μA － － － V MHz pF dB VCB=-50V，I VCB=-60V，I =0 =0 150 ｈＦＥ* ｈＦＥ ＶＣＥ（ｓａｔ） ｆＴ Cob NF VEB=-6V，I VCE=-6V，I 2SA1993 C =0 C =-1mA VCE=-6V，I C 2SA1235A,2SA1602A =-0.1mA 50 90 -0.3 200 4.0 20 Noise figure E F I C =-100mA，I B =-10mA VCE=-6V，I E =10mA VCB=-6V，...
