Isahaya Electronics Corporation 2SA1369
2SA1369 is a silicon PNP epitaxial type transistor designed with high collector dissipation and high collector current, high hFE.| Part No. | 2SA1369 |
|---|---|
| Datasheet | 2SA1369 Download |
| Manufacturer |  Isahaya Electronics Corporation |
| Description | SILICON PNP EPITAXIAL TYPE TRANSISTOR |
| Buy | Stock & Price |
DESCRIPTION
Complementary with 2SC3439. OUTLINE DRAWING 4.4 1.6 UNIT：ｍｍ 1.5 FEATURE●High hFE hFE=400～800
●High collector current IC=-1.5A,ICM=-3A
●Small collector to emitter saturation voltage VCE(sat)=-0.25V type（@IC=-1A/IB=-20mA）
●High collector dissipation PC=500mW
●Small package for easy mounting 1.0 2.5 3.9 ③②① 0.5 0.4 1.5 3.0 0.4 MARKING APPLICATION Small type motor drive for VTR, tape deck, player, drive for relay TERMINAL CONNECTOR ①：BASE ②：COLLECTOR ③：EMITTER JEITA：SC-62 JEDEC：SOT-89 MAXIMUM RATING（Ta=25℃） SYMBOL PARAMETER VCBO Collector to Base voltage VEBO Emitter to Base voltage VCEO Collector to Emitter voltage IC Collector current ICM Peak collector current PC Collector dissipation(Ta=25℃) Tj Junction temperature Tstg Storage temperature
ELECTRICAL CHARACTERISTICS
（Ta=25℃） SYMBOL PARAMETER V(BR)CBO V(BR)EBO V(BR)CEO ICBO IEBO C to B breakdown voltage E to B breakdown voltage C to E breakdown voltage Collector cut off current Emitter cut off current hFE ※ DC forward current gain VCE(sat) C to E saturation voltage fT Gain bandwidth product Cob Collector output capacitance ※） It shows hFE classification at right table.
