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2SA1602A Datasheet PDF

Isahaya Electronics Corporation 2SA1602A

Silicon PNP Transistor

Part No. 2SA1602A
Datasheet 2SA1602A Download
Manufacturer
Isahaya Electronics Corporation
Description Silicon PNP Transistor
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2SA1602A datasheet page 1 preview

MAXIMUM RATINGS

(Ta=25℃) Symbol VCBO VEBO VCEO I C PC Tj Tstg Parameter Collector to Base voltage Emitter to Base voltage Collector to Emitter voltage Collector current Collector dissipation Junction temperature Storage temperature Ratings 2SA1235A -60 -6 -50 200 200 200 +150 -55~+150 450 2SA1602A -60 2SA1993 -50 Unit V V V mA mW ℃ ℃

ELECTRICAL CHARACTERISTICS

(Ta=25℃) Parame ter V(BR)CEO I CBO I EBO Symbol C to E break down voltage Collector cut off current Emitter cut off current DC forward current gain DC forward current gain C to E Saturation Vlotage Gain bandwidth product Collector output capacitance C to E break down voltage 2SA1993 Test conditions I C=-100μA,RBE=∞ 2SA1235A,2SA1602A Min -50 E E Limits Typ Max -0.1 -0.1 -0.1 500 Unit V μA μA - - - V MHz pF dB VCB=-50V,I VCB=-60V,I =0 =0 150 hFE* hFE VCE(sat) fT Cob NF VEB=-6V,I VCE=-6V,I 2SA1993 C =0 C =-1mA VCE=-6V,I C 2SA1235A,2SA1602A =-0.1mA 50 90 -0.3 200 4.0 20 Noise figure E F I C =-100mA,I B =-10mA VCE=-6V,I E =10mA VCB=-6V,...
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