2SA2167 Datasheet PDF

ISAHAYA ELECTRONICS CORPORATION 2SA2167 FOR HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE TYPICAL CHARACTERISTICS DC FORWARD CURRENT GAIN VS. COLLECTOR CURRENT COLLECTOR TO EMITTER SATURATION VOLTAGE VS. COLLECTOR CURRENT -1000 COLLECTOR TO EMITTER SATURATION VOLTAGE VCE(sat)[mV] Ta=25℃ VCE=-6V Ta=25℃ IC/IB=20/1 1000 DC FORWARD CURRENT GAIN hFE 100 -100 10 -10 1 -1 -10 -100 -1000 COLLECTOR CURRENT IC[mA] -10000 -1 -1 -10 -100 -1000 COLLECTOR CURRENT IC[mA] -10000 GAIN BAND WIDTH PRODUCT VS. EMITTER CURRENT 1000 Ta=25℃ VCE=-2V COLLECTOR OUTPUT CAPATITANCE VS. COLLECTOR TO BASE VOLTAGE 100 COLLECTOR OUTPUT CAPACITANCE Cob[pF] Ta=25℃ IE=0A f=1MHz GAIN BAND WIDTH PRODUCT fT[MHz] 100 10 10 1 1 10 EMITTER CURRENT IE[mA] 100 1 -1 -10 COLLECTOR TO BASE VOLTAGE VCB[V] -100 COLLECTOR DISSIPATION VS. AMBIENT TEMPERATURE 700 600 COLLECTOR DISSIPATION Pc[mW] 500 400 300 200 100 0 0 25 50 75 100 125 AMBIENT TEMPERATURE Ta[℃] 150 ISAHAYA ELECTRONICS CORPORATION Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan Keep safety first in your circuit designs!