Isahaya Electronics Corporation 2SC5209
2SC5209 is a silicon NPN epitaxial type transistor. It designed with high voltage, high collector current and high hFE.DESCRIPTION
Complementary with 2SA1944. OUTLINE DRAWING 4.4 1.6 UNIT:mm 1.5 FEATURE●Small package for mounting.
●High hFE hFE=600~1800
●Small collector to emitter saturation voltage. VCE(sat)=0.15V typ (@IC=500mA, IB=10mA)
●High voltage VCEO=50V APPLICATION Audio machine, VTR, relay drive of other electronic machine, power supply. 1.0 2.5 3.9 ③②① 0.5 0.4 1.5 3.0 0.4 MARKING TERMINAL CONNECTOR ①:BASE ②:COLLECTOR ③:EMITTER JEITA:SC-62 JEDEC:SOT-89 MAXIMUM RATING(Ta=25℃) SYMBOL PARAMETER VCBO Collector to Base voltage VEBO Emitter to Base voltage VCEO Collector to Emitter voltage IC Collector current ICM Peak collector current PC Collector dissipation(Ta=25℃) Tj Junction temperature Tstg Storage temperature
ELECTRICAL CHARACTERISTICS
(Ta=25℃) SYMBOL PARAMETER V(BR)CBO V(BR)EBO V(BR)CEO ICBO IEBO C to B breakdown voltage E to B breakdown voltage C to E breakdown voltage Collector cut off current Emitter cut off current hFE ※ DC forward current gain VCE(sat) C to E saturation voltage fT Gain bandwidth product Cob Collector output capacitance ※) It shows hFE classification at right table.