DESCRIPTION
〈transistor〉 2SC5395 For Low Frequency Power Amplify Application Silicon NPN Epitaxial Type Micro（Frame type） OUTLINE DRAWING 4.0 UNIT：mm 3.0 1.0 1.0 13.0MIN 14.0 0.1 0.45 2.5 2.5 0.4 7.5MAX 2.5 ①②③ MAXIMUM RATINGS
（Ta=25℃） Symbol Parameter VCBO Collector to Base voltage VEBO Emitter to Base voltage VCEO Collector to Emitter voltage IC Collector current PC Collector dissipation Tj Junction temperature Tstg Storage temperature ELECTRICAL CHARACTERISTICS
（Ta=25℃） Ratings Unit 50 V 6 V 50 V 200 mA 450 mW +150 ℃ -55～+150 ℃ Parameter Symbol Test conditions V(BR)CEO C to B break down voltage IC= 100μA , RBE= ∞ ICBO Collector cut off current V CB= 50V , I E= 0mA IEBO Emitter cut off current V EB= 6V , I C= 0mA hFE DC forward current gain ※ V CE = 6V , IC= 1mA hFE DC forward current gain V CE = 6V , IC= 0.1mA VCE(sat) C to E Saturation Vlotage IC = 100mA , I B= 10mA fT Gain bandwidth product V CE= 6V , I E= -10mA Cob Collector output capacitance V CB= 6V , I E= 0mA,f=1MHz NF Noise figure V CE= 6V , I E= -0.1mA,f=1kHz,RG=2kΩ ※：It shows hFE classification at right table.
Isahaya Electronics Corporation
