Isahaya Electronics Corporation INA6006AS1
INA6006AS1 is a silicon PNP transistor. It is designed with high voltage.| Part No. | INA6006AS1 |
|---|---|
| Datasheet | INA6006AS1 Download |
| Manufacturer |  Isahaya Electronics Corporation |
| Description | TRANSISTOR |
| Buy | Stock & Price |
DESCRIPTION
INA6006AS1 is a silicon PNP transistor. It is designed with high voltage. FEATURE●Small package for easy mounting.
●High voltage VCEO = -150V
●Low voltage VCE(sat) = -0.5V(MAX)
●Complementary ： INC6006AS1 APPLICATION High voltage switching. OUTLINE DRAWING 4.0 UNIT：ｍｍ 7.5MAX 14.0 13.0MIN 3.0 1.0 1.0 0.1 0.45 2.5 2.5 ①②③ 0.4 2.5 TERMINAL CONNECTOR ①：EMITTER ②：COLLECTOR ③：BASE JEITA：JEDEC：- MAXIMUM RATING（Ta=25℃） SYMBOL PARAMETER VCBO Collector to Base voltage VEBO Emitter to Base voltage VCEO Collector to Emitter voltage I CM Peak collector current I C Collector current PC Collector dissipation(Ta=25℃) Tj Junction temperature Tstg Storage temperature
ELECTRICAL CHARACTERISTICS
（Ta=25℃） RATING -160 -5 -150 -200 -100 600 ＋150 -55～＋150 UNIT V V V mA mA mW ℃ ℃ SYMBOL PARAMETER TEST CONDITIONS V(BR)CBO V(BR)EBO V(BR)CEO ICBO IEBO hFE1 hFE2 hFE3 VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 VBE(on) fT Cob C to B break down voltage E to B break down voltage C to E break down voltage Coll...
