Isahaya Electronics Corporation INC6006AP1
INC6006AP1 is a silicon NPN transistor. It is designed with high voltage.| Part No. | INC6006AP1 |
|---|---|
| Datasheet | INC6006AP1 Download |
| Manufacturer |  Isahaya Electronics Corporation |
| Description | SILICON NPN EPITAXIAL TYPE TRANSISTOR |
| Buy | Stock & Price |
DESCRIPTION
INC6006AP1 is a silicon NPN transistor. It is designed with high voltage. FEATURE●Small package for easy mounting.
●High voltage VCEO = 160V
●Low voltage VCE(sat) = 0.2V(MAX)
●Complementary ： INA6006AP1 APPLICATION High voltage switching. 0.8 MIN 2.5 4.2 MAX <SMALL-SIGNAL TRANSISTOR> INC6006AP1 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE OUTLINE DRAWING 4.6 MAX 1.6 UNIT：ｍｍ 1.5 E CB 0.53 MAX 1.5 3.0 0.48 MAX 0.4 マーキング MARKING TER電MIN極A接L C続ONNECTOR E：EMＥI:TエTEミRッタ C：CＣＢO::LベLコEレーCTクスOタR B：BASE JEITA:SC-62 EJJEIAEDJDEEC: CS::CS-O6T2-89 JEDEC：― MAXIMUM RATING（Ta=25℃） SYMBOL PARAMETER VCBO Collector to Base voltage VEBO Emitter to Base voltage VCEO Collector to Emitter voltage I CM Peak collector current I C Collector current PC Collector dissipation(Ta=25℃) Tj Junction temperature Tstg Storage temperature
ELECTRICAL CHARACTERISTICS
（Ta=25℃） SYMBOL PARAMETER V(BR)CBO V(BR)EBO V(BR)CEO ICBO IEBO ｈＦＥ1 ｈＦＥ2 ｈＦＥ3 VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 fT Cob C...
