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RT2N12M Datasheet PDF

Isahaya Electronics Corporation RT2N12M

COMPOUND TRANSISTOR

Part No. RT2N12M
Datasheet RT2N12M Download
Manufacturer
Isahaya Electronics Corporation
Description COMPOUND TRANSISTOR
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RT2N12M datasheet page 1 preview
2.1 1.25 0.2 2.0 0.65 ‡@ ‡A ‡B ‡C ‡D 0.65 0.65 ‡D RTr1 ‡C RTr2 0●`0.1 R1 ‡@ R2 ‡A R2 ‡B R1 TERMINAL CONNECTOR ‡@
●F BASE ‚P ‡A
●F EMITTER
●iCOMMON
●j ‡B
●F BASE ‚Q ‡C
●F COLLECTOR ‚Q ‡D
●F COLLECTOR ‚P JEITA
●F●| JEDEC
●F●| MARKING ‡D N Collector dissipation
●iTotal Ta=25● Ž
● j Tj Tstg Junction temperature Storage temperature 150
●{150 -55●`●{150 mW
●Ž
●Ž H ‡@ ‡A ‡B ISAHAYA ELECTRONICS CORPORATION 0.13 0.9 ‡C ISAHAYA ELECTRONICS CORPORATION Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan Keep safety first in your circuit designs!
●ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or mishap.
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