RT3T1CU Datasheet PDF

DESCRIPTION

FEATURE Silicon epitaxial type Each transistor elements are independent. Mini package for easy mounting APPLICATION Inverted circuit, switching circuit, interface circuit, driver circuit OUTLINE DRAWING 1.6 ±0.05 1pin ﾏｰｸ 1.2 ±0.05 (0.5) 6 1.6 ±0.05 0.5 1. 0 0.5 1 2 3 (0.95) (0.5) 5 (Φ0.1 ～0.2) 4 Unit：mm 0.2 ±0.05 ※PNP built in transistor of ”－”sign is abbreviation. 0.5 ±0.05 0.12 ±0.05 ⑥⑤④ RTr1 R1 R2 R2 R1 ①② RTr2 ③ TERMINAL CONNECTOR ①：EMITTER1 ②：BASE1 ③：COLLECTOR2 ④：EMITTER2 ⑤：BASE2 ⑥:COLLECTOR1 JEITA：－ ISAHAYA：USM6F MAXIMUM RATING (Ta=25℃) SYMBOL VCBO VEBO VCEO IC ICM PC Tj Tstg PARAMETER Collector to Base voltage Emitter to Base voltage Tr1 Tr2 Collector to Emitter voltage Collector current Peak Collector current Collector dissipation（Total, Ta=25℃） Junction temperature Storage temperature RATING 50 10 6 50 100 200 125 ＋150 -55～＋150 UNIT V V V V mA mA mW ℃ ℃ MARKING 654 1C １23 ISAHAYA ELECTRONICS CORPORATION RT3T1CU Composite Transistor With Resistor For Switching Appl...