DESCRIPTION
FEATURE Silicon epitaxial type Each transistor elements are independent. Mini package for easy mounting APPLICATION Inverted circuit, switching circuit, interface circuit, driver circuit OUTLINE DRAWING 1.6 ±0.05 1pin マーク 1.2 ±0.05 (0.5) 6 1.6 ±0.05 0.5 1. 0 0.5 1 2 3 (0.95) (0.5) 5 (Φ0.1 ~0.2) 4 Unit:mm 0.2 ±0.05 ※PNP built in transistor of ”-”sign is abbreviation. 0.5 ±0.05 0.12 ±0.05 ⑥⑤ RTr1 R1 R2 R2 R1 ①② ④ RTr2 ③ TERMINAL CONNECTOR ①:EMITTER1 ②:BASE1 ③:COLLECTOR2 ④:EMITTER2 ⑤:BASE2 ⑥:COLLECTOR1 JEITA:- ISAHAYA:USM6F MAXIMUM RATING (Ta=25℃) SYMBOL VCBO VEBO VCEO VIN IC ICM PC Tj Tstg PARAMETER Collector to Base voltage Emitter to Base voltage Collector to Emitter voltage Input Voltage Collector current Peak Collector current Collector dissipation(Total, Ta=25℃) Junction temperature Storage temperature RATING 50 6 50 12 100 200 125 +150 -55~+150 UNIT V V V V mA mA mW ℃ ℃ MARKING 654 DD 123 ISAHAYA ELECTRONICS CORPORATION Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan Keep safety first in your circuit designs!