DESCRIPTION
OUTLINE DRAWING FEATURE Silicon epitaxial type Each transistor elements are independent. Mini package for easy mounting APPLICATION Inverted circuit, switching circuit, interface circuit, driver circuit Unit：mm ⑥⑤④ RTr1 R1 R2 R2 R1 ①② RTr2 ③ TERMINAL CONNECTOR ①：EMITTER1 ②：BASE1 ③：COLLECTOR2 ④：EMITTER2 ⑤：BASE2 ⑥:COLLECTOR1 JEITA：SC-88 MAXIMUM RATING (Ta=25℃) (RTr1_NPN, RTr2_PNP) SYMBOL PARAMETER RATING VCBO VEBO VCEO IC ICM PC Tj Tstg Collector to Base voltage 50 Emitter to Base voltage 6 Collector to Emitter voltage 50 Collector current 100 Peak Collector current 200 Collector dissipation（Total, Ta=25℃） 150 Junction temperature ＋150 Storage temperature -55～＋150 ※PNP built in transistor of ”－”sign is abbreviation. UNIT V V V mA mA mW ℃ ℃ MARKING 6 54 .THH １23 ISAHAYA ELECTRONICS CORPORATION RT3THHM Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type ELECTRICAL CHARACTERISTICS
(Ta=25℃) (RTr1_NPN, RTr2_PNP) Symbol Parameter Test conditions V(BR...
Isahaya Electronics Corporation
