ID7S210 - High Side&Low Side Gate Driver

The ID7S210 is a high voltage, high speed power MOSFET driver with independent high and low side referenced output channels based on P_SUB P_EPI process.

The floating channel can be used to drive an N-channel power MOSFET in the high side configuration which operates up to 200 V.

•  Fully operational to +200 V  3.3 V input logic compatible  dV/dt Immunity ±50 V/nsec  Gate drive supply range from 5 V to 20 V  Typically 150ns deadtime  Typically 1A output current capability  Typically -10V negative Vs bias capability  Matched propagation delay for both channels  ID7S210A (LO is in phase with LIN)  ID7S210B (LO is out of phase with LIN)  ID7S210AD/ ID7S210BD (with built-in BSD).