IDT8M656S
Key Features
- High-density 256K112BK-bit CMOS static RAM modules
- Upper byte (IIOg _'6) and lower byte (1/0, _s) separated control -Flexibility in application
- High-speed -Military - 60ns (max.) -mercial - 50ns (max.)
- Low-power consumption: typically less than 1W operating (IDTBM656), less than 1mW in standby
- Utilizes IDT7164s - high-performance 64K static RAMs produced with advanced CEMOS
- CEMOS process virtually eliminates alpha particle soft error rates (with no organic die coating)
- Assembled with IDT's high-reliability vapor phase solder reflow process
- Offered in the JEDEC standard 40-pin, 600 mil wide ceramic sidebraze DIP
- Single 5V (±10%) power supply
