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INA2586 - 1024 x 8 EEPROM

General Description

SYMBOL Uss CS TP1 TP2 SDA SCL TP3 Ucc PIN 1 2 3 4 5 6 7 8 DESCRIPTION GND Chip selection Testing pin Testing pin (0V - normal mode, 5V - chip erasing) Informational line, input/output Clock input Testing pin, not connected Supply Voltage w w w t a .D Erase and Write UTP2= 5,0 B S a e h ILOH

Key Features

  • . w w.
  • Non-volatile storage of information during 10 years Single supply (Ucc=4,75 B - 5,25 B) On-chip voltage multiplier On-chip generator of bulk biasing Serial input/output I2C-bus 10 000 ERASE/WRITE cycles per byte; Internal reprogramming (no external components) Duration of the ERASE/WRITE cycle is 15 ms Temperature range: 0 ÷ +700C m o . c.

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Datasheet Details

Part number INA2586
Manufacturer IK Semiconductor
File Size 112.94 KB
Description 1024 x 8 EEPROM
Datasheet download datasheet INA2586 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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w U 4 t 1024 x 8-Bit n-MOS EEPROM with I2C-Bus Interface e e h S a t a D FEATURES . w w ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Non-volatile storage of information during 10 years Single supply (Ucc=4,75 B - 5,25 B) On-chip voltage multiplier On-chip generator of bulk biasing Serial input/output I2C-bus 10 000 ERASE/WRITE cycles per byte; Internal reprogramming (no external components) Duration of the ERASE/WRITE cycle is 15 ms Temperature range: 0 ÷ +700C m o .c TECHNICAL DATA INA2586 The INA2586 is a 8-Kbit (1024 x 8-bit) n-MOS floating gate electrically erasable programmable read only memory (EEPROM). IC works in systems with serial I2C-bus. Up to two INA2586 devices may be connected to the I2C-bus.The programming of the array is implemented by electron’s tunneling.