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SL1001 - Audio Frequency Power Amplifier

Key Features

  • Low Speed Switching SOT-223 SL1001 Emitter Collector Base 123 SL1001 PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Tc=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage - 40 V VCEO Collector-Emitter Voltage - 30 V VEBO Emitter-Base Voltage -5 V IC Collector Current (DC) -3 A ICP.
  • Collector Current (Pulse) -7 A IB Base Current (DC) - 0.6 A PC Collector Dissipation (TC=25°C) 10 W Rθja Junction to Ambient 132 °C/W.

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Datasheet Details

Part number SL1001
Manufacturer IK Semiconductor
File Size 300.25 KB
Description Audio Frequency Power Amplifier
Datasheet download datasheet SL1001 Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TECHNICAL DATA Audio Frequency Power Amplifier Features ● Low Speed Switching SOT-223 SL1001 Emitter Collector Base 123 SL1001 PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Tc=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage - 40 V VCEO Collector-Emitter Voltage - 30 V VEBO Emitter-Base Voltage -5 V IC Collector Current (DC) -3 A ICP *Collector Current (Pulse) -7 A IB Base Current (DC) - 0.6 A PC Collector Dissipation (TC=25°C) 10 W Rθja Junction to Ambient 132 °C/W Rθjc Junction to Case 13.5 °C/W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C * PW≤10ms, Duty Cycle≤50% * Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device.