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® ISO 9001 Registered
Process C1210
CMOS 1.2µ m Zero Threshold Devices
Electrical Characteristics
N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage Poly Field Threshold Voltage Zero Vt N-Channel Transis. Threshold Voltage Body Factor Conduction Factor Saturation Current Symbol VTN γN βN LeffN ∆WN BVDSSN VTFP(N) Symbol VTZLN γZLN βZLN IDSATZN Minimum 0.55 64 0.8 9 10 Minimum 0.00 75 28 Typical 0.15 0.348 90 34 Typical 0.75 0.34 75 1.0 0.6
T=25oC Unless otherwise noted Maximum Unit Comments 0.95 V 100x1.2µm V1/2 100x1.2µm 86 µA/V2 100x100µm 1.2 µm 100x1.2µm µm Per side V V
Maximum 0.30 105 40 Unit V V1/2 µA/V2 mA Comments 100x100µm 100x100µm 100x100µm 100x1.
C1210 Datasheet
