IMP Inc C1210
Process C1210 CMOS 1.2mm Zero Threshold Devices
| Part No. | C1210 |
|---|---|
| Datasheet | C1210 Download |
| Manufacturer |  IMP Inc |
| Description | Process C1210 CMOS 1.2mm Zero Threshold Devices |
| Buy | Stock & Price |
ELECTRICAL CHARACTERISTICS
N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage Poly Field Threshold Voltage Zero Vt N-Channel Transis. Threshold Voltage Body Factor Conduction Factor Saturation Current Symbol VTN γN βN LeffN ∆WN BVDSSN VTFP(N) Symbol VTZLN γZLN βZLN IDSATZN Minimum 0.55 64 0.8 9 10 Minimum 0.00 75 28 Typical 0.15 0.348 90 34 Typical 0.75 0.34 75 1.0 0.6 T=25oC Unless otherwise noted Maximum Unit Comments 0.95 V 100x1.2µm V1/2 100x1.2µm 86 µA/V2 100x100µm 1.2 µm 100x1.2µm µm Per side V V Maximum 0.30 105 40 Unit V V1/2 µA/V2 mA Comments 100x100µm 100x100µm 100x100µm 100x1.5µm P-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage Poly Field Threshold Voltage Symbol VTP γP βP LeffP ∆WP BVDSSP VTFP(P) Minimum –0.7 21 0.9 –9.0 –10.0 Typical –0.9 0.38 25 1.1 0.8 Maximum –1.1 29 1.3 Unit V V1/2 µA/V2 µm µm V V Comments 100x1.2µm 100x1.2µm 100x100µm 100x1.2µm Per side Zero Vt P-Channel Transis.
