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Inchange Semiconductor
BU180
BU180 is Silicon NPN Darlington Power Transistor manufactured by Inchange Semiconductor.
DESCRIPTION - Collector Current -IC= 10A - DC Current Gain- : h FE= 200(Min)@ IC= 5A - Low Collector Saturation Voltage - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - Designed for line operated switchmode applications such as: - Switching regulators - Inverters - Solenoid and relay drivers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage Collector Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature ℃ Tstg Storage Temperature Range -55~150 ℃ BU180 isc website:.iscsemi. 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL...