Datasheet Details
| Part number | BU180 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 216.19 KB |
| Description | Silicon NPN Darlington Power Transistor |
| Download | BU180 Download (PDF) |
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Overview: isc Silicon NPN Darlington Power Transistor.
| Part number | BU180 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 216.19 KB |
| Description | Silicon NPN Darlington Power Transistor |
| Download | BU180 Download (PDF) |
|
|
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·Collector Current -IC= 10A ·DC Current Gain- : hFE= 200(Min)@ IC= 5A ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for line operated switchmode applications such as: ·Switching regulators ·Inverters ·Solenoid and relay drivers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 320 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 10 A 50 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ BU180 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ;IB=0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A;
IB= 20mA VBE(sat) Base-Emitter Saturation Voltage IC= 4A;
IB= 20mA ICEO Collector Cutoff Current VCE= 200V;
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