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10N12 - N-Channel MOSFET

Key Features

  • Drain Current.
  • ID= 10A@ TC=25℃.
  • Drain Source Voltage- : VDSS= 120V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 0.3Ω(Max).
  • SOA is Power-Dissipation Limited.
  • Nanosecond Switching Speeds.
  • High Input Impedance.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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isc N-Channel Mosfet Transistor ·FEATURES ·Drain Current –ID= 10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 120V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.3Ω(Max) ·SOA is Power-Dissipation Limited ·Nanosecond Switching Speeds ·High Input Impedance ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Designed for switching converters,motor dirvers,relay dirvers ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 120 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 10 A IDM Drain Current-Single Plused 25 A PD Total Dissipation @TC=25℃ 75 W Tj Max.