10N12 Datasheet (PDF) Download
Inchange Semiconductor
10N12

Key Features

  • Drain Current -ID= 10A@ TC=25℃
  • Drain Source Voltage- : VDSS= 120V(Min)
  • Static Drain-Source On-Resistance : RDS(on) = 0.3Ω(Max)
  • SOA is Power-Dissipation Limited
  • Nanosecond Switching Speeds
  • High Input Impedance
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation
  • Designed for switching converters,motor dirvers,relay dirvers