Datasheet4U Logo Datasheet4U.com

10N45 - N-Channel MOSFET

General Description

Drain Current ID=10A@ TC=25℃ Drain Source Voltage- : VDSS= 450V(Min) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for applications such as switching regulators, switching converters,mo

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
10N40 N-CHANNEL POWER MOSFET UTC
10N431K MHS10N431K RGA
10N03L IPP10N03L Infineon Technologies AG
10N100-FL 1000V N-CHANNEL POWER MOSFET UTC
10N120BND HGTG10N120BND Fairchild Semiconductor

Other Datasheets by Inchange Semiconductor

Part Number Description
10N12 N-Channel MOSFET
10N50 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 450V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for applications such as switching regulators, switching converters,motor drivers,relay drivers and drivers for power bipolar switching transistors requiring High speed and low gate drive power ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 450 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 10 A Ptot Total Dissipation@TC=25℃ 150 W Tj Max.