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10TQ035 - Schottky Barrier Rectifier

Features

  • With TO-220 packaging.
  • Metal silicon junction, majority carrier conduction.
  • Low leakage current, low power loss, high efficiency.
  • High current capability and low forward voltage drop.
  • Guardring for overvoltage protection.
  • High surge capability.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Schottky Barrier Rectifier INCHANGE Semiconductor 10TQ035 FEATURES ·With TO-220 packaging ·Metal silicon junction, majority carrier conduction ·Low leakage current, low power loss, high efficiency ·High current capability and low forward voltage drop ·Guardring for overvoltage protection ·High surge capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching power supply ·High frequency inverters ·Freewheeling diodes ·Reverse battery protection ·Polarity protection applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VRRM VRMS VR IF(AV) Peak Repetitive Reverse Voltage RMS Voltage DC Blocking Voltage Average Rectified Forward Current @Tc=125℃ VALUE UNI T 35 V 10 A IFSM Nonrepetitive Peak Surge Current ( tP
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