125N10T Description
·Drain Current ID=120A@ TC=25℃ ·Drain Source Voltage- : VDSS=100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 5.8mΩ(Max)@VGS= 10V;.
- Part: 125N10T
- Manufacturer: Inchange Semiconductor
- Size: 201.38 KB
125N10T is N-Channel MOSFET manufactured by Inchange Semiconductor.
·Drain Current ID=120A@ TC=25℃ ·Drain Source Voltage- : VDSS=100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 5.8mΩ(Max)@VGS= 10V;.