125N10T Datasheet | Inchange Semiconductor

DESCRIPTION - Drain Current ID=120A@ TC=25℃ - Drain Source Voltage- : VDSS=100V(Min) - Static Drain-Source On-Resistance : RDS(on) = 5.8mΩ(Max)@VGS= 10V; ID= 40A - Fast Switching Speed - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - Switch mode power supplies - DC-DC converters for tele, Off-line UPS，automotive System, solenoid and Motor Control ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VDSS VGS ID IDM Ptot Drain-Source Voltage (VGS=0) Gate-Source Voltage Drain Current-continuous@ TC=25℃ Pulsed Drain Current Total Dissipation@TC=25℃ Total Dissipation@Ta=25℃ Tj Max. Operating Junction Temperature Tstg Storage Temperature Range VALUE UNIT ±20 192 W -55~150 ℃ -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.78 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W isc website：.iscsemi. 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor INCHANGE Semiconductor - ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25m...