Inchange Semiconductor 12N18
N-Channel Mosfet Transistor
| Part No. | 12N18 |
|---|---|
| Datasheet | 12N18 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | N-Channel Mosfet Transistor |
| Buy | Stock & Price |
FEATURES
●Drain Current ID= 12A@ TC=25℃●Drain Source Voltage- : VDSS= 180V(Min)
●Static Drain-Source On-Resistance : RDS(on) = 0.25Ω(Max)
●Fast Switching
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
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APPLICATIONS
●Switch mode power supply.●
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 180 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 12 A IDM Drain Current-Single Plused 30 A PD Total Dissipation @TC=25℃ 75 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃●THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.25 ℃/W 12N18 isc website： 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor
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ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID=250µA VGS(th) Gate Threshold Voltage VDS= VGS; ID=250µA VSD Diod...
