Inchange Semiconductor 12N65
N-Channel MOSFET Transistor
| Part No. | 12N65 |
|---|---|
| Datasheet | 12N65 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | N-Channel MOSFET Transistor |
| Buy | Stock & Price |
FEATURES
●Drain Current –ID= 12A@ TC=25℃●Drain Source Voltage- : VDSS= 650V (Min)
●Static Drain-Source On-Resistance : RDS(on) = 0.85Ω(Max)
●Avalanche Energy Specified
●Fast Switching
●Simple Drive Requirements
●DESCRITION
●Designed for high efficiency switch mode power supply.
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ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 650 ±30 V V ID Drain Current-Continuous 12 A IDM Drain Current-Single Plused 48 A PD Total Dissipation @TC=25℃ 225 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃●THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Rth j-a Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 0.56 ℃/W 62.5 ℃/W isc website： 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification 12N65
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS...