Inchange Semiconductor 16NF06
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 16NF06 |
|---|---|
| Datasheet | 16NF06 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
DESCRIPTION
●Drain Current ID= 16A@ TC=25℃●Static Drain-Source On-Resistance : RDS(on) = 100mΩ(Max)
●Fast Switching Speed
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
●
APPLICATIONS
●high packing density for low on-resistance，rugged avalanche characteristics and less critical alignment steps therefore remarkable manufacturing reproducibilityABSOLUTE MAXIMUM RATINGS
(TC=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 60 V VGS Gate-Source Voltage ±20 V Drain Current-continuous@ TC=25℃ 16 ID A Drain Current-continuous@ TC=100℃ 11 ID(puls) Pulse Drain Current 64 A Ptot Total Dissipation@TC=25℃ 45 W Tj Max. Operating Junction Temperature 175 ℃ Tstg Storage Temperature Range●THERMAL CHARACTERISTICS SYMBOL PARAMETER -55~175 ℃ MAX UNIT Rth j-c Thermal Resistance, Junction to Case 3.33 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 62.5 ℃/W isc website： 1 isc & iscsemi is registered trademark N-Channel MOSFET Transistor STP16NF06,IS...
