Datasheet Details
| Part number | 16NF06 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 224.76 KB |
| Description | N-Channel MOSFET |
| Download | 16NF06 Download (PDF) |
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Overview: N-Channel MOSFET Transistor STP16NF06，ISTP16NF06 ·.
| Part number | 16NF06 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 224.76 KB |
| Description | N-Channel MOSFET |
| Download | 16NF06 Download (PDF) |
|
|
|
·Drain Current ID= 16A@ TC=25℃ ·Static Drain-Source On-Resistance : RDS(on) = 100mΩ(Max) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·high packing density for low on-resistance，rugged avalanche characteristics and less critical alignment steps therefore remarkable manufacturing reproducibility ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 60 V VGS Gate-Source Voltage ±20 V Drain Current-continuous@ TC=25℃ 16 ID A Drain Current-continuous@ TC=100℃ 11 ID(puls) Pulse Drain Current 64 A Ptot Total Dissipation@TC=25℃ 45 W Tj Max.
Operating Junction Temperature 175 ℃ Tstg Storage Temperature Range ·THERMAL CHARACTERISTICS SYMBOL PARAMETER -55~175 ℃ MAX UNIT Rth j-c Thermal Resistance, Junction to Case 3.33 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 62.5 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark N-Channel MOSFET Transistor STP16NF06,ISTP16NF06 ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0;
ID= 250µA VGS(th) Gate Threshold Voltage VDS= VGS;
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