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16NF06 - N-Channel MOSFET

Description

Drain Current ID= 16A@ TC=25℃ Static Drain-Source On-Resistance : RDS(on) = 100mΩ(Max) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high packing density for low on-resistance，rugged avalanche chara

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Datasheet Details

Part number 16NF06
Manufacturer Inchange Semiconductor
File Size 224.76 KB
Description N-Channel MOSFET
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    N-Channel MOSFET Transistor STP16NF06，ISTP16NF06 ·DESCRIPTION ·Drain Current ID= 16A@ TC=25℃ ·Static Drain-Source On-Resistance : RDS(on) = 100mΩ(Max) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·high packing density for low on-resistance，rugged avalanche characteristics and less critical alignment steps therefore remarkable manufacturing reproducibility ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 60 V VGS Gate-Source Voltage ±20 V Drain Current-continuous@ TC=25℃ 16 ID A Drain Current-continuous@ TC=100℃ 11 ID(puls) Pulse Drain Current 64 A Ptot Total Dissipation@TC=25℃ 45 W Tj Max.
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