Inchange Semiconductor 17N60
N-Channel Mosfet Transistor
| Part No. | 17N60 |
|---|---|
| Datasheet | 17N60 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | N-Channel Mosfet Transistor |
| Buy | Stock & Price |
FEATURES
●Drain Current ID= 17A@ TC=25℃●Drain Source Voltage : VDSS= 600V(Min)
●Static Drain-Source On-Resistance : RDS(on) = 0.45Ω(Max)
●Fast Switching
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
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APPLICATIONS
●Switch mode power supply.●
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 17 A IDM Drain Current-Single Plused 68 A PD Total Dissipation @TC=25℃ 250 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃●THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 0.5 ℃/W 17N60 isc website： 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor 17N60
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ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage VSD Diode Forward On-voltage RDS(on) Drain-Source...