Inchange Semiconductor 20N06
N-Channel MOSFET
| Part No. | 20N06 |
|---|---|
| Datasheet | 20N06 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
●Drain Current ID= 20A@ TC=25℃●Drain Source Voltage- : VDSS= 60V(Min)
●Static Drain-Source On-Resistance : RDS(on) = 0.085Ω(Max)
●Fast Switching
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
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APPLICATIONS
●Switching applications in power supplies●Motor controls,high efficient DC to DC converters
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ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 60 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 20 A IDM Drain Current-Single Plused 80 A PD Total Dissipation @TC=25℃ 40 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃●THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 3.125 ℃/W isc website： 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor INCHANGE Semiconductor 20N06
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ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Brea...