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isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
25N40A
·FEATURES ·Drain Current ID= 25A@ TC=25℃ ·Drain Source Voltage
: VDSS= 400V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.2Ω(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation.
·APPLICATIONS ·Switch mode power supply.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
400
V
VGS
Gate-Source Voltage-Continuous
±30
V
ID
Drain Current-Continuous
25
A
PD
Total Dissipation @TC=25℃
278
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150 ℃
isc website:www.iscsemi.