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25N40A - N-Channel MOSFET

Key Features

  • Drain Current ID= 25A@ TC=25℃.
  • Drain Source Voltage : VDSS= 400V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 0.2Ω(Max).
  • Fast Switching.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor 25N40A ·FEATURES ·Drain Current ID= 25A@ TC=25℃ ·Drain Source Voltage : VDSS= 400V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.2Ω(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. ·APPLICATIONS ·Switch mode power supply. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 400 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 25 A PD Total Dissipation @TC=25℃ 278 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website:www.iscsemi.