Inchange Semiconductor 25N60
N-Channel MOSFET
| Part No. | 25N60 |
|---|---|
| Datasheet | 25N60 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
●Drain Current ID= 25A@ TC=25℃●Drain Source Voltage- : VDSS= 600V(Min)
●Static Drain-Source On-Resistance : RDS(on) = 0.21Ω(Max)
●Fast Switching
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APPLICATIONS
●Switching regulators●Switching converters,motor drivers,relay drivers
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ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 600 ±30 V V ID Drain Current-Continuous 25 A IDM Drain Current-Single Plused 80 A PD Total Dissipation @TC=25℃ 300 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website： 1 isc & iscsemi is registered trademark PDF pdfFactory Pro INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 25N60●
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage VSD Diode Forward On-voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current IDSS Zero Gate Voltage Drain Curren...