Download 2N0609 Datasheet PDF
Inchange Semiconductor
2N0609
FEATURES - Static drain-source on-resistance: RDS(on)≤9.1mΩ - 100% avalanche tested - Minimum Lot-to-Lot variations for robust device performance and reliable operation - DESCRITION - Ultra Low On-resistance - Fast Switching - ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage Gate-Source Voltage ±20 Drain Current-Continuous Total Dissipation @TC=25℃ Tj Max. Operating Junction Temperature ℃ Tstg Storage Temperature -55~175 ℃ - THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance MAX 0.79 UNIT...