Inchange Semiconductor 2N1702
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2N1702 |
|---|---|
| Datasheet | 2N1702 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Collector-Emitter Breakdown Voltage- : VCEO=60V(Min)●Minimum Lot-to-Lot variations for robust device Performance and reliable operation
APPLICATIONS
●Power amplifier and switching applicationsABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNI T VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous PD Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 5 A 75 W -65~200 ℃ Tstg Storage Temperature Range -65~200 ℃ 2N1702 isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2N1702ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IB=10uA ICEO Collector-Emitter Cutoff Current VCE= 30V VCE(sat) Collector-Emitter Saturation Voltage IC=0.8A; IB= 0.08A VBE(sat) Base-Emitter Saturation Voltage IC= 0.8A; IB= 0.08A hFE-1 DC Current Gain IC=0.8A; VCE=4V MIN TYP. MAX UNIT 40 V 40 uA 3.2 V 3.5 V 15 60 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.