Inchange Semiconductor 2N2222
Silicon NPN Power Transistor
| Part No. | 2N2222 |
|---|---|
| Datasheet | 2N2222 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Collector Current- IC= 0.8A●Collector-Emitter Breakdown Voltage- : V(BR)CEO= 30V(Min)
●Complement to Type 2N2907
APPLICATIONS
●Designed for general-purpose switching and linear amplification.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO VEBO Collector-Emitter Voltage Emitter-Base Voltage IC Collector Current-Continuous IBM Base Current-Peak PC Collector Power Dissipation@TC=25℃ TJ Junction Temperature Tstg Storage Temperature THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-a Thermal Resistance,Junction to Ambient isc Product Specification 2N2222 VALUE 60 30 5 0.8 0.2 0.5 150 -65~150 UNIT V V V A A W ℃ ℃ MAX 350 UNIT K/W isc Website： INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2N2222ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR) CEO V(BR)EBO Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage IC=10mA ; IB=0 IE=10μA ; IC=0 VCE(sat)-1 Col...