Datasheet Details
| Part number | 2N3171H |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 193.66 KB |
| Description | PNP Transistor |
| Datasheet | 2N3171H-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistor.
| Part number | 2N3171H |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 193.66 KB |
| Description | PNP Transistor |
| Datasheet | 2N3171H-INCHANGE.pdf |
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·Excellent Safe Operating Area ·Collector-Emitter Saturation Voltage- : VCE(sat)= -0.75V(Max)@ IC = -1A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Be processed in accordance with the requirements of BS, CECC,and JAN,JANTX and JANTXV and JAN specifications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -10 V IC Collector Current-Continuous -3 A PC Collector Power Dissipation@TC=25℃ 75 W TJ, Tstg Operating and Storage Junction Temperature Range -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.67 ℃/W 2N3171H ISC Website：www.iscsemi.cn isc Silicon PNP Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -1A;
IB= -0.14A VBE(sat) Base-Emitter Saturation Voltage IC= -1A;
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2N3171 | Silicon PNP Power Transistor | Inchange Semiconductor |
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2N3171 | Bipolar PNP Device | Seme LAB |
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