Inchange Semiconductor 2N3171H
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2N3171H |
|---|---|
| Datasheet | 2N3171H Download |
| Manufacturer |  Inchange Semiconductor |
| Description | PNP Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Excellent Safe Operating Area●Collector-Emitter Saturation Voltage- : VCE(sat)= -0.75V(Max)@ IC = -1A
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Be processed in accordance with the requirements of BS, CECC,and JAN,JANTX and JANTXV and JAN specifications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -10 V IC Collector Current-Continuous -3 A PC Collector Power Dissipation@TC=25℃ 75 W TJ, Tstg Operating and Storage Junction Temperature Range -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.67 ℃/W 2N3171H ISC Website： isc Silicon PNP Power TransistorsELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.14A VBE(sat) Base-Emitter Saturation Voltage IC= -1A; I...