Datasheet Details
| Part number | 2N4233A |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 184.91 KB |
| Description | NPN Transistor |
| Datasheet | 2N4233A-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2N4233A |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 184.91 KB |
| Description | NPN Transistor |
| Datasheet | 2N4233A-INCHANGE.pdf |
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·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation.
APPLICATIONS ·Designed for general-purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A PC Collector Power Dissipation@TC=25℃ 75 W TJ Junction Temperature -65~200 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 2.32 ℃/W 2N4233A isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS)* Collector-Emitter Sustaining Voltage IC=100mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2N4233A | POWER TRANSISTORS | Mospec Semiconductor |
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2N4233A | Bipolar NPN Device | Seme LAB |
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2N4233 | Bipolar NPN Device | Seme LAB |
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2N4233 | Medium-power NPN silicon transistors | Motorola |
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