Inchange Semiconductor 2N4348
The device employs the popular JEDEC TO-3 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. The information contained herein is presented only as a guide for the applications of our products.| Part No. | 2N4348 |
|---|---|
| Datasheet | 2N4348 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Excellent Safe Operating Area●Low Collector-Emitter Saturation Voltage
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APPLICATIONS
●High voltage high current power transistorsABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC PC TJ Tstg Collector-Base Voltage 140 V Collector-Emitter Voltage 120 V Emitter-Base Voltage 7 V Collector Current-Continuous 10 A Collector Power Dissipation@TC=25℃ 120 W Junction Temperature 200 ℃ Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.46 ℃/W 2N4348 isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS)* Collector-Emitter Sustaining Voltage IC=200mA; IB= 0 ICEO Collector Cutoff Current VCE=100V;IB= 0 IEBO Emitter Cutoff Current VEB= 7V; IC= 0 VCE(sat)-1* Collector-Emitter Saturation Voltage IC= 5A; IB= 500mA VCE(sat)-2* Collector-Emitter Saturation Vo...