Inchange Semiconductor 2N4396
The device employs the popular JEDEC TO-3 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. The information contained herein is presented only as a guide for the applications of our products.| Part No. | 2N4396 |
|---|---|
| Datasheet | 2N4396 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Excellent Safe Operating Area●Low Collector-Emitter Saturation Voltage
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APPLICATIONS
●High voltage high current power transistorsABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC PC TJ Tstg Collector-Base Voltage 80 V Collector-Emitter Voltage 60 V Emitter-Base Voltage 4 V Collector Current-Continuous 5 A Collector Power Dissipation@TC=25℃ 62 W Junction Temperature 150 ℃ Storage Temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 2 ℃/W 2N4396 isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS)* Collector-Emitter Sustaining Voltage IC=30mA; IB= 0 ICEO Collector Cutoff Current VCE=60V;IB= 0 IEBO Emitter Cutoff Current VEB= 4V; IC= 0 hFE DC Current Gain *:Pulse test:Pulse width=300us,duty cycle≤2% IC=2A; VCE= 1V 2N4396 MIN MAX UNIT 60 V 1 mA 0.1 mA 40 170 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.