Inchange Semiconductor 2N4902
Silicon PNP Power Transistors
DESCRIPTION
¡¤With TO-3 package ¡¤Complement to type 2N5067/5068/5069 ¡¤Low collector saturation voltageAPPLICATIONS
¡¤For general–purpose switching and power amplifier applications. PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbolDESCRIPTION
Absolute maximum ratings(Ta=¡æ ) SYMBOL PARAMETER CONDITIONS 2N4901 VALUE -40 UNIT VCBO Collector-base voltage 2N4902 2N4903 2N4901 Open emitter -60 -80 -40 V VCEO Collector-emitter voltage 2N4902 2N4903 Open base -60 -80 V VEBO IC ICM IB PD Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature Open collector -5 -5 -10 -1 V A A A W ¡æ ¡æ TC=25¡æ 87.5 200 -65~200 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 2.0 UNIT ¡æ/W Datasheet pdf - Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25¡æ unless otherwise specified PARAMETER 2N49...