| Part number | 2N5109 |
|---|---|
| Download | 2N5109 Datasheet (PDF) |
| File Size | 183.99 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
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| Manufacturer | Part Number | Description |
|---|---|---|
Microsemi |
2N5109 | RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
Motorola Semiconductor |
2N5109 | HIGH FREQUENCY TRANSISTOR |
Central Semiconductor |
2N5109 | NPN RF TRANSISTOR |
ASI |
2N5109 | NPN SILICON HIGH FREQUENCY TRANSISTOR |
Advanced Power Technology |
2N5109 | RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
·High Current-Gain Bandwidth Product : MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 100mA; IB= 10mA 0.5 V ICBO Collector Cutoff Current VCB= 40V;.
