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2N5297 - NPN Transistor

General Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 60V(Min) Collector-Emitter Saturation Voltage- : VCE(sat) = 1.0V(Max)@ IC= 1.5A, IB= 0.15A Wide Area of Safe Operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation

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isc Silicon NPN Power Transistor 2N5297 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 60V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat) = 1.0V(Max)@ IC= 1.5A, IB= 0.15A ·Wide Area of Safe Operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for medium power switching amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 4.0 A IB Base Current PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 2.