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2N5468 - NPN Transistor

Datasheet Summary

Description

Excellent Safe Operating Area Low Collector-Emitter Saturation Voltage The device employs the popular TO-66 100% avalanche tested

and reliable operation.

High voltage high current power transistor

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Datasheet Details

Part number 2N5468
Manufacturer INCHANGE
File Size 180.90 KB
Description NPN Transistor
Datasheet download datasheet 2N5468 Datasheet
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isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·The device employs the popular TO-66 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·High voltage high current power transistors ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC PC TJ Tstg Collector-Base Voltage 500 V Collector-Emitter Voltage 400 V Emitter-Base Voltage 7 V Collector Current-Continuous 3 A Collector Power Dissipation@TC=25℃ 70 W Junction Temperature 150 ℃ Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 2.5 ℃/W 2N5468 isc website：www.iscsemi.
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