Inchange Semiconductor 2N5932
Silicon NPN Power Transistors
| Part No. | 2N5932 |
|---|---|
| Datasheet | 2N5932 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN Power Transistors |
| Buy | Stock & Price |
DESCRIPTION
●DC Current Gain- : hFE= 20-100@IC= 10A●Low Collector Saturation Voltage- : VCE(sat)= 2.0V(Max)@ IC= 20A
APPLICATIONS
●Designed for general purpose power amplifier and switching applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5V IC Collector Current-Continuous 30 A IB Base Current-Continuous 7.5 A PC Collector Power Dissipation @TC=25℃ 175 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 0.875 ℃/W isc website： 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Power Transistors isc Product Specification 2N5932ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise